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| GSD2004WS New Product Vishay Semiconductors formerly General Semiconductor High-Voltage Small-Signal Switching Diode SOD-323 .012 (0.3) Cathode Band .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Top View Dimensions in inches and (millimeters) Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) .059 (1.5) .004 (0.1) max. .043 (1.1) .049 (1.25) max. .010 (0.25) min. .006 (0.15) max. Mechanical Data Case: SOD-323 Plastic Package Weight: approx. 0.004g Marking Code: B6 Packaging Codes/Options: D5/10K per 13" reel (8mm tape), 30K/box D6/3K per 7" reel (8mm tape), 30K/box Features * Silicon Epitaxial Planar Diode * Fast switching diode,especially suited for applications requiring high voltage capability Maximum Ratings and Thermal Characteristics Parameter Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Forward Current (continuous) Peak Repetitive Forward Current Non-Repetitive Peak Forward Current at tp = 1s at tp = 1s Power Dissipation Typical Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range Note: (1) Device on Fiberglass Substrate, see layout on second page TA = 25C unless otherwise noted Symbol VR VRRM IRRM IF IFRM IFSM Ptot RJA Tj TS Value 240 300 200 225 625 4.0 1.0 200 (1) 650 (1) Unit V V mA mA mA A mW C/W C C 150 -65 to +150 Document Number 88202 14-May-02 www.vishay.com 1 GSD2004WS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter Reverse Breakdown Voltage Leakage Current Forward Voltage Capacitance Reverse Recovery Time TJ = 25C unless otherwise noted Symbol VBR IR VF Ctot trr Test Condition IR = 100A VR = 240V VR = 240V, Tj = 150C IF = 20mA IF = 100mA VF = VR = 0 f = 1MHz IF = IA = 30mA Irr = 3.0mA, RL = 100 Min 300 -- -- -- -- -- -- Typ -- -- -- 0.83 -- -- -- Max -- 100 100 0.87 1.00 5.0 50 Unit V nA A V pF ns Note: (1 )Device on fiberglass substrate, see layout www.vishay.com 2 Document Number 88202 14-May-02 |
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